Electrical Characteristics of T-CNTFET: Partially-Gated Channel vs Doping Engineering

Abstract

The major limitation of tunneling carbon nanotube field-effect transistors (T-CNTFET) is the ambipolar behavior. In this paper, we show that this problem could be solved by using a partially-gated channel, or Gaussian doping method. The effect of using the two mentioned methods on the electrical characteristics of T-CNTFET has been examined. The non-equilibrium Green’s functions (NEGF) in conjunction with Poisson’s equation are solved self-consistently. The cutoff frequency (fT) and power-delay product (PDP) as well as the intrinsic delay (τ) have been considered as key parameters for frequency performance and speed characteristics. The simulation results show an improvement in the OFF-state current and the high-frequency performance as well as a suppression of the ambipolar conduction. These advantages of the proposed techniques make T-CNTFET suitable for low-power and high-speed applications